document number: 89365 for technical questions within your region, please contact one of the following: www.vishay.com revision: 26-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 trench mos barrier schottky rectifier for pv solar cell bypass protection ultra low v f = 0.30 v at i f = 5.0 a vt3045cbp vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in solar cell junction box as a bypass diode for protection, using dc forward current without reverse bias. mechanical data case: to-220ab molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum notes (1) with heatsink (2) meets the requirements of iec 61 215 ed. 2 bypass di ode thermal test primary characteristics i f(av) 2 x 15 a v rrm 45 v i fsm 200 a v f at i f = 15 a 0.39 v t op max. 150 c to-220ab vt3045cbp 1 2 3 pin 1 pin 2 case pin 3 tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vt3045cbp unit maximum repetitive pe ak reverse voltage v rrm 45 v maximum average forward rectified current (fig. 1) per device i f(av) (1) 30 a per diode 15 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 200 a operating junction and storage temperature range t op , t stg - 40 to + 150 c junction temperature in dc forward current without reverse bias, t 1 h t j (2) 200 c
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89365 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 26-oct-10 vt3045cbp vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.42 - v i f = 7.5 a 0.44 - i f = 15 a 0.49 0.57 i f = 5 a t a = 125 c 0.30 - i f = 7.5 a 0.33 - i f = 15 a 0.39 0.48 reverse current per diode v r = 45 v t a = 25 c i r (2) - 2000 a t a = 125 c 17 50 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vt3045cbp unit typical thermal resistance per diode r jc 1.6 c/w per device 0.85 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab vt3045cbp-m3/4w 1.89 4w 50/tube tube case temperat u re (c) a v erage for w ard rectified c u rrent (a) 35 30 25 20 5 0 100 110 120 130 140 150 15 10 0 1 6 7 8 9 02 6 10 161 8 a v erage for w ard c u rrent (a) a v erage po w er loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 12 d = t p /t t p t 3 4 5 2 14 4 8
document number: 89365 for technical questions within your region, please contact one of the following: www.vishay.com revision: 26-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vt3045cbp vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) instantaneo u s for w ard voltage (v) 0 0.2 0.4 0.7 100 10 1 0.1 t a = 150 c t a = 125 c t a = 100 c t a = 25 c 0.6 instantaneo u s for w ard c u rrent (a) 0.1 0.3 0.5 20 40 60 8 0 100 1 0.1 0.01 0.001 100 10 percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 100 10 000 100 000 0.1 1 10 100 re v erse voltage (v) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 1000 10 0.1 0.01 0.1 1 10 100 t - p u lse d u ration (s) j u nction to case 1 transient thermal impedance (c/w) to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55)
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